Single event effects in static and dynamic registers in a 0.25im CMOS technology

IEEE Transactions on Nuclear Science

Volumn 46, Issue 6 PART 1, 1999, Pages 1434-1439

  Faccio, F ^a   Kloukinas, K ^a   Marchioro, A ^a   Calin, T ^a   Cosculluela, J ^a   Nicolaidis, M ^a   Velazco, R ^a  

^a TIMA LABORATORY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

APPLICATION SPECIFIC INTEGRATED CIRCUITS; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; DOSIMETRY; ELECTRIC NETWORK TOPOLOGY; ELECTRIC POWER SUPPLIES TO APPARATUS; FLIP FLOP CIRCUITS; SHIFT REGISTERS;

DOSE TOLERANCE; LARGE HADRON COLLIDER; SINGLE EVENT EFFECTS; STORAGE CELL;

RADIATION EFFECTS;

EID: 0033307440     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.819104     Document Type: Article

References (11)

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