The Insulated Gate Transistor: A New Three-Terminal MOS-Controlled Bipolar Power Device

IEEE Transactions on Electron Devices

Volumn 31, Issue 6, 1984, Pages 821-828

  Baliga, B Jayant ^a   Adler, Michael S ^a   Love, Robert P ^a   Gray, Peter V ^a   Zommer, Nathan D ^b  

^a GENERAL ELECTRIC COMPANY   (United States)

^b INTERSIL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC SWITCHES, SEMICONDUCTOR; SEMICONDUCTOR DEVICES, MOSFET;

INSULATED GATE TRANSISTOR; VERTICAL DMOS PROCESS;

TRANSISTORS, BIPOLAR;

EID: 0021437150     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1984.21614     Document Type: Article

References (8)

1. B. J. Baliga, “Silicon power field controlled devices and integrated circuits,” in Silicon Integrated Circuits, D. Kahng, Ed., Applied Solid State Science Series, Supplement 2B. New York: Academic Press, 1981.
2. B. J. Baliga, “Switching lots of watts at high speeds,” IEEE Spectrum, vol.18, pp. 42-48, 1981.
3. M. S. Adler and V.A.K. Temple, “The dynamics of the thyristor turn-on process,” IEEE Trans. Electron Devices, vol. ED-27, pp. 483–494, 1980.
4. B. J. Baliga, “Enhancement and depletion mode vertical channel MOS gated thyristors,” Electron. Lett., vol. 15, pp. 645–647, 1979.
5. J. Tihaji, “Functional integration of power MOS and bipolar devices,” presented at the Int. Electron Devices Meeting, 1980, paper 4.2, pp. 75–78.
6. J. Plummer and B. W. Scharf, “Insulated gate planar thyristors,” IEEE Trans. Electron Devices, vol. ED-27, pp. 380–394, 1980.
7. B. J. Baliga, M. S. Adler, P. V. Gray, R. P. Love, and N. Zommer, “The insulated gate rectifier (IGR): A new power switching device,” IEDM Tech. Dig. pp. 264–267, 1982.
8. J. P. Russell, A. M. Goodman, L. A. Goodman, and J. M. Neilson, “The COMFET-A new high conductance MOS-gated device,” IEEE Electron Device Lett., vol. EDL-4, pp. 63–65. 1983.