Simulation Aided Hardening of N-channel Power MOSFETs to Prevent Single Event Burnout

IEEE Transactions on Nuclear Science

Volumn 42, Issue 6, 1995, Pages 1935-1939

  Dachs, Charles ^a   Roubaud, Franck ^b   Palau, Jean Marie ^c   Bruguier, Guy ^c   Gasiot, Jean ^c   Tastet, Pierre ^d   Calvet, Marie Catherine ^c   Calvel, Philippe ^e  

^a CERN   (Switzerland)

^b UNIVERSITÉ DES ANTILLES ET DE LA GUYANE   (France)

^c CNES ^*  (France)

^d CNES   (France)

^e THALES ALENIA SPACE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; FAILURE (MECHANICAL); RADIATION HARDENING; SEMICONDUCTOR DOPING;

CARRIER LIFETIME; EMITTER DOPING; SIMULATION AIDED HARDENING; SINGLE EVENT BURNOUT;

MOSFET DEVICES;

EID: 0029492482     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.489237     Document Type: Article

References (13)

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