Experimental and 2D simulation study of the Single-Event Burnout in N-channel power MOSFET's

IEEE Transactions on Nuclear Science

Volumn 40, Issue 6, 1993, Pages 1952-1958

  Roubaud, Franck ^a   Dachs, Charles ^a   Palau, Jean Marie ^a   Gasiot, Jean ^a   Tastet, Pierre ^b  

^a UNIV MONTPELLIER   (France)

^b CNES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CALIFORNIUM; COMPUTER SIMULATION; ELECTRIC CURRENT MEASUREMENT; ELECTRIC CURRENTS; ELECTRIC PROPERTIES; IONS; ITERATIVE METHODS; NETWORKS (CIRCUITS); NONLINEAR EQUATIONS; RADIATION EFFECTS; SIMULATORS;

BURNOUT SENSITIVITY; CURRENT SHAPES; ELECTRICAL ENVIRONMENT PARAMETERS; HEAVY IONS; ION IMPACT EFFECT; LINEAR ENERGY TRANSFER; SINGLE EVENT BURNOUT; SUPPLY VOLTAGE;

MOSFET DEVICES;

EID: 0027844670     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.273458     Document Type: Article

References (9)

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