Amorphous silicon detector and thin film transistor technology for large area imaging of X-rays

2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings

Volumn 1, Issue , 2000, Pages 77-84

  Nathan, A ^a   Murthy, R V R ^a   Ma, Q ^a   Park, B ^a   Pham, H ^a   Sazonov, A ^a  

^a UNIVERSITY OF WATERLOO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; FLEXIBLE ELECTRONICS; MICROELECTRONICS; THIN FILMS; IMAGING TECHNIQUES; SILICON DETECTORS; SUBSTRATES; THIN FILM TRANSISTORS; X RAY DETECTORS; X RAYS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TUNNELING; PHOTODETECTORS; PHOTONS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SCHOTTKY BARRIER DIODES;

CURRENT FABRICATION; FABRICATION OF THIN FILMS; IMAGING TECHNOLOGY; OPERATING PRINCIPLES; OPTICAL DETECTORS; OPTOELECTRONIC CHARACTERISTICS; PIXEL STRUCTURE; PROCESSING CONDITION; AMORPHOUS SILICON DETECTOR; HYDROGENATED AMORPHOUS SILICON;

THIN FILM TRANSISTORS; THIN FILM CIRCUITS; INTEGRATED OPTOELECTRONICS;

EID: 0033300927     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICMEL.2000.840533     Document Type: Conference Paper

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