Reverse current transient behavior in amorphous silicon Schottky diodes at low biases

Applied Physics Letters

Volumn 70, Issue 24, 1997, Pages 3260-3262

  Hornsey, R I ^a   Aflatooni, K ^a   Nathan, A ^a  

^a UNIVERSITY OF WATERLOO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000230741     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119141     Document Type: Article

References (5)

1. R. A. Street, Hydrogenated Amorphous Silicon (Cambridge University Press, Cambridge, 1991).
2. H. Kida, K. Hattori, H. Okamoto, and Y. Hamakawa, J. Appl. Phys. 59, 4079 (1986).
3. R. A. Street, Philos. Mag. B 63, 1343 (1991).
4. A. M. Miri and S. G. Chamberlain, Mater. Res. Soc. Symp. Proc. 377, 737 (1995).
5. T. Tiedje and A. Rose, Solid State Commun. 37, 49 (1980).