The study of fluorinated amorphous carbon as low-k dielectric material and its interface with copper metallization

Materials Research Society Symposium - Proceedings

Volumn 565, Issue , 1999, Pages 203-208

  Ariel, N ^a   Eizenberg, M ^a   Tzou, E Y ^b  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^b APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CHEMICAL BONDS; COPPER; ELECTRON ENERGY LEVELS; FLUORINE; INTERFACES (MATERIALS); METALLIZING; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

COPPER METALLIZATION; FLUORINATED AMORPHOUS CARBON; HIGH DENSITY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; NUCLEAR REACTIONS ANALYSIS;

DIELECTRIC MATERIALS;

EID: 0033300133     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-565-203     Document Type: Article

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