Surface roughening of SiC and Ga-containing semiconductors in reactive plasmas

Materials Science in Semiconductor Processing

Volumn 2, Issue 4, 1999, Pages 349-357

  Franz, Gerhard ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLOGRAPHY; ELECTRIC DISCHARGES; ELECTRIC FIELD EFFECTS; ETCHING; LIGHT EMITTING DIODES; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SILICON CARBIDE; SURFACE ROUGHNESS;

CAPACITIVELY-COUPLED DISCHARGES; REACTIVE PLASMAS;

SEMICONDUCTOR PLASMAS;

EID: 0033300131     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(99)00037-2     Document Type: Article

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