The influence of fluorine on boron-enhanced diffusion in silicon by BF2+ implantation through oxide during high temperature rapid thermal anneal

Journal of the Electrochemical Society

Volumn 144, Issue 11, 1997, Pages

  Wang, L Z ^a   Luo, M S C ^b   Tseng, H H ^b,c   Ajuria, S A ^a  

^a MOTOROLA INC   (United States)

^b Advanced Products R and D Laboratory   (United States)

^c ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMS; FLUORINE; INTERFACES (MATERIALS); MOSFET DEVICES; OXYGEN; PRECIPITATION (CHEMICAL); SEMICONDUCTING BORON; SEMICONDUCTING SILICON; SILICA;

BORON DIFFUSION; END OF RANGE; HIGH TEMPERATURE ANNEALING;

DIFFUSION;

EID: 0031273185     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1838075     Document Type: Article

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