Effects of size and shape of lateral confinement on the formation of NiSi2, CoSi2, and TiSi2 on silicon inside miniature size oxide openings

Materials Research Society Symposium - Proceedings

Volumn 427, Issue , 1996, Pages 499-504

  Chen, L J ^a   Yew, J Y ^a   Cheng, S L ^a   Chen, K M ^a   Nakamura, K ^a   Tsui, B Y ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COBALT COMPOUNDS; EPITAXIAL GROWTH; NICKEL COMPOUNDS; OXIDES; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; STRESS CONCENTRATION;

LATERAL CONFINEMENT; MINIATURE SIZE OXIDE OPENINGS;

SEMICONDUCTOR GROWTH;

EID: 0030400060     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-427-499     Document Type: Conference Paper

References (15)