Homoepitaxial layers of gallium nitride grown by metalorganic vapour phase epitaxy

Semiconductor Science and Technology

Volumn 12, Issue 2, 1997, Pages 240-243

  Teisseyre, H ^a   Leszczynski, M ^a   Suski, T ^a   Grzegory, I ^a   Bockowski, M ^a   Jun, J ^a   Porowski, S ^a   Pakula, K ^b   Robert, J L ^c   Beaumont, B ^d   Gibart, P ^d   Vaille, M ^d   Faurie, J P ^d  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^b UNIVERSITY OF WARSAW   (Poland)

^c UNIV MONTPELLIER   (France)

^d CRHEA CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS; LATTICE CONSTANTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; POINT DEFECTS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

EPITAXIAL LAYER; FREE ELECTRON; GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031075355     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/12/2/015     Document Type: Article

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