Metal-oxide-Si capacitors hot-electron and radiation hardness improvement by gate electrodes deposited using amorphous Si and gate oxides rapid thermal annealed in N2O

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 36, Issue 5 B, 1997, Pages

  Chang Liao, Kuei Shu ^a   Chen, Ling Chih ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CHARGE; ELECTRODES; GATES (TRANSISTOR); MOS DEVICES; NITROGEN OXIDES; RADIATION HARDENING; SILICA; STRAIN; STRESS RELAXATION;

COMPRESSIVE STRESSES; GATE OXIDES; HOT ELECTRON HARDNESS;

CAPACITORS;

EID: 0031140411     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.l604     Document Type: Article

References (12)