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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 8 PART A, 1996, Pages

Improvement of hot-electron hardness in metal-oxide-semiconductor devices by combination of gate electrode deposited using amorphous si and gate oxide grown in N2O

(2) Chang Liao, Kuei Shu a Lan, Tang Yuan a

a NATIONAL TSING HUA UNIVERSITY (Taiwan)

Author keywords

Amorphous Si; Hot electron hardness; MOS capacitor; N2O

Indexed keywords

AMORPHOUS SILICON; CAPACITORS; DEPOSITION; ELECTRIC BREAKDOWN; ELECTRIC CHARGE; ELECTRODES; HARDNESS; INTERFACES (MATERIALS); NITROGEN OXIDES; RELAXATION PROCESSES; SEMICONDUCTOR GROWTH; STRESSES;

COMPRESSIVE STRESS; FLAT BAND VOLTAGE SHIFT; GATE ELECTRODES; GATE OXIDES; HOT ELECTRON HARDNESS; HYDROGEN EFFECTS; INTERFACE TRAPS;

MOS DEVICES;

EID: 0030214877 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.35.l968 Document Type: Article

Times cited : (6)

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