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Journal of Crystal Growth

Volumn 162, Issue 1-2, 1996, Pages 15-24

Conditions of excess liquid phase formation during molecular beam epitaxy of III-V ternary compounds

(2) Alexeev, A N a Karpov, S Yu a

a Advanced Technology Center (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; EPITAXIAL GROWTH; GRAIN BOUNDARIES; LATTICE CONSTANTS; PHASE COMPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; STRAIN; TERNARY SYSTEMS; THERMODYNAMIC PROPERTIES;

ARSENIDE FLUX; EXCESS LIQUID PHASE FORMATION; TEMPERATURE GAP; THERMODYNAMIC BOUNDARY;

MOLECULAR BEAM EPITAXY;

EID: 0030563083 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/0022-0248(95)00922-1 Document Type: Article

Times cited : (6)

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