Performance dependence of InGaP/InGaAs/GaAs pHEMT's on gate metallization

IEEE Electron Device Letters

Volumn 20, Issue 11, 1999, Pages 554-556

  Fay, P ^a   Stevens, K ^b   Elliot, J ^b   Pan, N ^b  

^a University of Notre Dame   (United States)

^b KOPIN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

METALLIZING; MILLIMETER WAVE DEVICES; OHMIC CONTACTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

MODULATION FIELD EFFECT TRANSISTORS (MODFET);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0033221253     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.798041     Document Type: Article

References (9)

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