0.065 μm gate InGaP/InGaAs/GaAs pseudomorphic HEMTs with highly-doped 11.5nm thick InGaP electron supply layers

Solid-State Electronics

Volumn 41, Issue 10, 1997, Pages 1647-1650

  Nihei, M ^a   Hara, N ^a   Suehiro, H ^a   Kuroda, S ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); HETEROJUNCTIONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; TRANSCONDUCTANCE;

ELECTRON SUPPLY LAYERS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0031248455     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00118-4     Document Type: Article

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