Design, simulation, and realization of solid state memory element using the weakly coupled GMR effect

IEEE Transactions on Magnetics

Volumn 32, Issue 2, 1996, Pages 520-526

  Wang, Zhi Gang ^b   Nakamura, Yoshihisa ^a,b  

^a IEEE

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; MAGNETIC CORE STORAGE; MAGNETIC DISK STORAGE; MAGNETIC TAPE; MAGNETIC THIN FILMS; MAGNETIZATION; MAGNETORESISTANCE; RANDOM ACCESS STORAGE; SOLID STATE DEVICES; SWITCHING;

GIANT MAGNETORESISTANCE EFFECT; MAGNETIC HARD DISK; MAGNETORESISTIVE RANDOM ACCESS MEMORY; SEMICONDUCTOR MEMORY; SOLID STATE MEMORY ELEMENT; THRESHOLD EXCITATION CURRENTS;

MAGNETIC STORAGE;

EID: 0030110553     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/20.486542     Document Type: Article

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