Novel spin-valve memory architecture

IEEE Transactions on Magnetics

Volumn 33, Issue 5 PART 1, 1997, Pages 3295-3297

  Melo, Luís V ^a  

^a INESC   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

MAGNETIC MATERIALS; MAGNETIZATION; MAGNETORESISTANCE; MULTILAYERS;

GIANT MAGNETORESISTANCE (GMR) MATERIALS; SPIN VALVE (SV) SANDWICH STRUCTURES;

MAGNETIC FILM STORAGE;

EID: 0031223490     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/20.617922     Document Type: Article

References (6)

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2. D. D. Tang, P.K.Wang, V. S. Speriosu, S. Le and K, K. Rung, Spin-Valve RAM Cell, IEEE Trans. Magn., vol. 31,p. 3206,1995.
3. Z. G. Wang and Y. Nakamura, "Design, Simulation and Realization of Solid State Memory Element Using the Weakly Coupled GMR Effect", IEEE Trans. Magn., vol. 32, p. 520, 1996.
4. J. L. Brown and A V. Pohm, "1-Mb Memory Chip Using Giant Magnetoresistive Memory Cells", IEEE Trans. Comp. Pack. Man. Tech. Part A, vol. 17, p. 373, 1994.
5. E. E. Chen, A V. Pohm, J. M. Daughton, J. Brown and W. C. Black, "High Sensitivity, GMR, 1 Micron Wide, End-On, Ganged, Read Head Sensors", IEEE Trans. Magn., vol. 30, p. 3816, 1994.
6. P. P. Freitas, J. L. Leal, L. V. Melo, N. J. Oliveira, L. Rodrigues and A T. Sousa, "Spin-Valve Sensors Exchange Biased by Uftrathin TbCo Films", Appl. Phys. Lett., vol. 65(4), p. 493, July 1994.