Magnetoresistive memory technology

Thin Solid Films

Volumn 216, Issue 1, 1992, Pages 162-168

  Daughton, J M ^a  

^a NVE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001375241     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(92)90888-I     Document Type: Article

References (13)

1. The design of a one megabit nonvolatile M-R memory chip using 1.5 × 1.5 mm cells
2. Ultra high density nondestructive readout M-R cells
3. 2 arrays
4. Quadrupled non-destructive outputs from M-R memory cells using reversed read fields
5. Giant magnetoresistance of 001 Fe/001 Cr magnetic sublattices
6. Oscillatory magnetic exchange coupling through thin copper layers
7. Anisotropic magnetoresistance in ferromagnetic 3D alloys
8. Spin-valve magnetoresistance of uncoupled Fe-Cu-Co sandwiches
9. Giant magnetoresistance of magnetically soft spin-valve sandwiches: dependence on temperature and on layer thickness
10. Spin polarization of electrons tunneling from films of Fe, Co, Ni, and Gd