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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 38, Issue 8 A, 1999, Pages

Vertical-cavity surface-emitting lasers with stable polarization grown on (411)A-oriented GaAs substrates

(5) Kaneko, Yasuhisa a Mars, Dan E a Nakagawa, Shigeru a,b Ichimura, Yoshikatsu a Yamada, Norihide a

a HEWLETT PACKARD LABORATORIES (United States)

b Santa Barbara (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CONTINUOUS WAVE LASERS; ELECTRIC CURRENTS; ETCHING; LIGHT POLARIZATION; MOLECULAR BEAM EPITAXY; OXIDATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SUBSTRATES;

OPTICAL GAIN; THRESHOLD CURRENT; VERTICAL CAVITY SURFACE EMITTING LASERS;

SEMICONDUCTOR LASERS;

EID: 0033171674 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.38.l864 Document Type: Article

Times cited : (5)

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