Polarization-controlled single-mode VCSEL

IEEE Journal of Quantum Electronics

Volumn 34, Issue 6, 1998, Pages 1009-1014

  Yoshikawa, Takashi ^a,b,c   Kawakami, Takeshi ^a   Saito, Hideaki ^a   Kosaka, Hideo ^a   Kajita, Mikiyasu ^a   Kurihara, Kaori ^a   Sugimoto, Yoshimasa ^a   Kasahara, Kenichi ^a  

^a NEC CORPORATION   (Japan)

^b KEIO UNIVERSITY   (Japan)

^c NEC Corporation ^*  (Japan)

Author keywords

Laser diode; Polarization; RIN; Scattering loss; Single mode; VCSEL

Indexed keywords

ANISOTROPY; LASER MODES; LIGHT POLARIZATION; LIGHT SCATTERING; OPTICAL VARIABLES CONTROL; SEMICONDUCTOR DEVICE MANUFACTURE;

RELATIVE INTENSITY NOISE (RIN); VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

SEMICONDUCTOR LASERS;

EID: 0032096637     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.678597     Document Type: Article

References (31)

1. D. L. Huffacker, J. Shin, and D. G. Deppe, "Low threshold half-wave vertical cavity lasers," Electron. Lett., vol. 30, pp. 1946-1947, 1994.
2. G. M. Yang. M. H. MacDougal, and P. D. Dapkus, "Ultra low threshold current vertical-cavity surface-emitting lasers obtained with selective oxidation," Electron. Lett., vol. 31, pp. 886-888, 1995.
3. Y. Hayashi, T. Mukaihara, N. Hatori, N. Ohnoki, A. Matsutani, F. Koyama, and K. Iga, "Record low threshold index-guided InGaAs/GaAlAs vertical-cavity surface-emitting lasers with a native oxide confinement structure," Electron. Lett., vol. 31, pp. 560-561, 1995.
4. K. D. Choquette, R. P. Schneider, K. L. Lear, and K. M. Geib, "Low threshold voltage vertical-cavity lasers fabricated by selective oxidation," Electron. Lett., vol, 30, pp, 2043-2044, 1994.
5. K. L. Lear, K. D. Choqette, R. P. Schneider, S. P, Kilcoyne, and K. M. Geib, "Selective oxidised vertical cavity surface emitting lasers with 50% power conversion efficiency," Electron. Lett., vol. 31, pp. 208-209. 1995.
6. R. Jäger, M. Grabherr, C. Jung, R. Michalzik, G. Reiner, B. Weigl, and K. J. Ebeling. "57% wallplug efficiency oxide-confined 850 nm wavelength GaAs VCSEL's" Electron. Lett., vol. 33, pp. 330-331, 1997.
7. R. A. Morgan and M. K. Hibbs-Brenner, "Vertical-cavity surface-emitting laser arrays," Proc. SPIE, vol. 2398, p. 65-93, 1995.
8. J. W. Scott, D. B. Young, B. J. Thibeault, M. G. Peters, and L. A. Coldren, "Design of index-guided vertical-cavity lasers for low temperature-sensitivity, sub-miliamp threshold, and single-mode operation," IEEE J. Select. Topics Quantum Electron., vol. 1, pp. 638-648, 1995.
9. M. Kajita, T. Kawakami, M. Nido, A. Kimura, T. Yoshikawa, K. Kurihara, Y. Sugimoto, and K. Kasahara, "Temperature characteristics of a vertical-cavity surface-emitting laser with a broad-gain bandwidth" IEEE J. Select. TopicsQuantum Electron., vol. 1, pp. 654-660, 1995.
10. U. Fiedler, G. Reiner, P. Schnitzer, and K. Ebeling, "Top surface-emitting vertical-cavity laser diodes for 10-Gb/s data transmission," IEEE Photon. Technol. Lett., vol. 8, pp. 746-748, 1996.
11. M. Lebby, C. A. Gaw, W. Jiang, P. A. Kiely, P. R. Claisse, and J. Grula, "Key challenges and result of VCSEL's in data links," in Proc. 9th Annu. Meet. IEEE Lasers and Electro-Optics Society (LEOS '96), Boston MA, 1996, vol. 2. pp. 167-168.
12. M. Ishikawa, "Optoelectronic parallel computing system with reconfigurable optical interconnection," in Optoelectronic Interconnects and Packaging, R. T.Chen and P. S. Guilfoyle, Eds., critical reviews of Optical Science and Technology, vol. CR62, pp. 156-175, SPIE, 1996.
13. Z. Pan, S. Jiang, M. Dagenais, R. A. Morgan, K. Kojima, M. T. Asom, R. E. Leibenguth, G. D. Guth, and M. W. Focht, "Optical injection induced polarization bistability in vertical-cavity surface-emitting lasers," Appl. Phys. Lett., vol. 63, pp. 2999-3001, 1993
14. C. J. Chang-Hasnain, J. P. Harbison, G. Hasnain, A. C. Von Lehmen, L. T. Florez, and N. G. Stoffel, "Dynamic, polarization, and transverse mode characteristics of vertical cavity surface emitting lasers," IEEE J. Quantum Electron., vol. 27, pp. 1402-1409, 1991.
15. H. Kawaguchi and I. S. Hidayat, "Gigahertz all-optical flip-flop operation of polarization-bistable vertical-cavity surface-emitting lasers," Electron. Lett., vol. 31, pp. 1150-1151, 1995.
16. K. D. Choquette and R. E. Leibenguth, "Control of vertical-cavity laser polarization with anisotropic transversal cavity geometries," IEEE Photon. Technol. Lett., vol. 6, pp. 40-42, 1994.
17. T. Mukaihara, F. Koyama, and K. Iga, "Engineered polarization control of GaAs/AlGaAs surface-emitting laseres by anisotropic stress from elliptical etched substrate hole," IEEE Photon. Technol. Lett., vol. 5, pp. 133-135, 1993.
18. T. Ohtoshi, T. Kuroda, A. Niwa, and S. Tsuji, "Dependence of optical gain on crystal orientation in surface-emitting lasers with strained quantum wells," Appl. Phys. Lett., vol. 65, pp. 1886-1887, 1994
19. K. D. Choquette, R. P. Schneider, K. L. Lear, and R. E. Leibenguth, "Gain-dependent polarization properties of vertical-cavity lasers," IEEE J. Select. Topics Quantum Electron., vol. 1, pp. 661-666, 1995.
20. H. Saito, K. Nishi, S. Sugou, and Y. Sugimoto, "Controlling polarization of quantum-dot surface-emitting lasers by using structurally anisotropic self-assembled quantum dots," Appl. Phys. Lett., vol. 71. pp. 590-592, 1997.
21. Y. H. Chen, C. I. Wilkinson, J. Woodhead, C. C. Button, J. P. R. David, M. A. Pate, and P. N. Robson, "Polarization characteristics of InGaAlP/AlGaAs visible vertical cavity surface emitting lasers," Electron. Lett., vol. 32, pp. 559-560, 1996.
22. T. Yoshikawa, H. Kosaka, K. Kurihara, M. Kajita, Y. Sugimoto, and K. Kasahara, "Complete polarization control of 8×8 vertical-cavity surface-emitting laser matrix arrays," Appl. Phys. Lett., vol. 66, pp. 908-910, 1995.
23. _, "Complete polarization control of 8×8 vertical-cavity surface-emitting laser matrix arrays," presented at OSA Topical Meeting on Quantum Optoelectronics (QOE '95), Dana Point, CA, 1995
24. T. Yoshikawa, H. Kosaka, M. Kajita, K. Kurihara, Y. Sugimoto, and K. Kasahara, "Alternately perpendicular polarization in chequer-pattern matrix arrays of VCSEL's," Electron. Lett., vol. 31, pp. 1573-1574, 1995.
25. D. V. Kuksenkov, H. Temkin, and T. Yoshikawa, "Dynamic properties of vertical-cavity surface-emitting lasers with improved polarization stability," IEEE Photon. Technol. Lett., vol. 8 pp. 977-979, 1996.
26. H. Kosaka, K. Kurihara, A. Uemura, T. Yoshikawa, I. Ogura, T. Numai, M. Sugimoto, and K. Kasahara, "Uniform characteristics with low threshold and high efficiency for a single-transverse-mode vertical-cavity surface-emitting laser-type device array," IEEE Photon. Technol. Lett., vol. 6, pp. 323-325, 1994.
27. H. Saito, H. Kosaka, M. Sugimoto, I. Ogura, K. Kasahara, and Y. Sugimoto, "Integration of vetical-cavity surface-emitting devices by molecular beam epitaxy regrowth," J. Voc. Sci. Technol. B, vol. 12, p. 2905, 1994.
28. K. Kurihara, T. Numai, T. Yoshikawa, H. Kosaka, M. Sugimoto, Y. Sugimoto, and K. Kasahara, "Uniformity improvement of optical and electro-photonic device with a vertical cavity," Jpn. J. Appl. Phys., vol. 33, pp. 1352-1356, 1994.
29. 2 reactive ion beam etching," J. Vac. Sci. Technol. B, vol. 14, pp. 1764-1772, 1996.
30. E. A. J. Marcatili, "Dielectric rectangular waveguide and directional coupler for integrated optics," Bell Syst. Tech. J. vol. 48, pp. 2071-2102, 1969.
31. M. Born and E. Wolf, Principles of Optics, 6th ed. Oxford, U.K.: Pergamon, 1970.