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Volumn 175-176, Issue PART 1, 1997, Pages 359-364

Fabrication of InGaAs vertical-cavity surface-emitting lasers by molecular beam epitaxy on (4 1 1)a GaAs substrates and its room-temperature operation

(4) Hanamaki, Yoshihiko a Takeuchi, Tetsuya b Ogasawara, Nagaatsu c Shiraki, Yasuhiro a

a UNIVERSITY OF TOKYO (Japan)

b HEWLETT PACKARD LABORATORIES (United States)

c UNIVERSITY OF ELECTRO COMMUNICATIONS (Japan)

Author keywords

(4 1 1)A GaAs substrates; MBE; Pulsed operation; Room temperature operation; VCSEL

Indexed keywords

HETEROJUNCTIONS; LASER PULSES; MIRRORS; MOLECULAR BEAM EPITAXY; OPTICALLY PUMPED LASERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SUBSTRATES;

DISTRIBUTED BRAGG REFLECTORS (DBR); VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

SEMICONDUCTOR LASERS;

EID: 0031141089 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(96)00944-X Document Type: Article

Times cited : (5)

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