Ageing of laser crystallized and unhydrogenated polysilicon thin film transistors

Microelectronics Reliability

Volumn 39, Issue 6-7, 1999, Pages 851-855

  Rahal, A ^a,c   Mohammed Brahim, T ^a,b   Toutah, H ^b   Tala Ighil, B ^b   Helen, Y ^a   Prat, C ^d   Raoult, F ^a  

^a UNIVERSITÉ DE RENNES 1   (France)

^b Université de Caen Normandie   (France)

^c UNIVERSITY OF SCIENCES AND TECHNOLOGY HOUARI BOUMEDIENE   (Algeria)

^d SOPRA   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; DIFFUSION; EXCIMER LASERS; HYDROGEN; LASER APPLICATIONS; PRESSURE EFFECTS; SEMICONDUCTING SILICON; THRESHOLD VOLTAGE;

LASER CRYSTALLIZATION; LASER CRYSTALLIZED THIN FILM TRANSISTORS; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; UNHYDROGENATED POLYSILICON THIN FILM TRANSISTORS;

THIN FILM TRANSISTORS;

EID: 0033145278     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2714(99)00112-2     Document Type: Article

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