State creation induced by gate bias stress in unhydrogenated polysilicon TFTs

Thin Solid Films

Volumn 337, Issue 1-2, 1999, Pages 101-104

  Tala Ighil, B ^a   Rahal, A ^b,c   Mourgues, K ^b   Toutah, A ^a   Pichon, L ^b   Mohammed Brahim, T ^a,b   Raoult, F ^b   Bonnaud, O ^b  

^a Université de Caen Normandie   (France)

^b UNIVERSITÉ DE RENNES 1   (France)

^c UNIVERSITY OF SCIENCES AND TECHNOLOGY HOUARI BOUMEDIENE   (Algeria)

Author keywords

Polysilicon; Reliability; TFT

Indexed keywords

EID: 0344638255     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01192-4     Document Type: Article

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