Gate bias stress in hydrogenated and unhydrogenated polysilicon thin film transistors

Microelectronics Reliability

Volumn 38, Issue 6-8, 1998, Pages 1149-1153

  Tala Ighil, B ^a   Toutah, H ^a   Rahal, A ^b,c   Mourgues, K ^b   Pichon, L ^b   Raoult, F ^b   Bonnaud, O ^b   Mohammed Brahim, T ^a,b  

^a Université de Caen Normandie   (France)

^b Grp Microlectron et Visualisation   (France)

^c UNIVERSITY OF SCIENCES AND TECHNOLOGY HOUARI BOUMEDIENE   (Algeria)

Author keywords

[No Author keywords available]

Indexed keywords

AGING OF MATERIALS; AMORPHOUS SILICON; CRYSTAL DEFECTS; DEHYDROGENATION; GATES (TRANSISTOR); HYDROGENATION; MOSFET DEVICES; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; STRESSES;

GATE BIAS STRESS;

THIN FILM TRANSISTORS;

EID: 0032083651     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(98)00098-5     Document Type: Article

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