Ion-implanted GaAs-InGaAs lateral current injection laser

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 5, Issue 3, 1999, Pages 664-672

  Tager, A A ^a   Gaska, R ^b,c   Avrutsky, I A ^a   Fay, M ^a   Chik, H ^a   SpringThorpe, A ^d   Eicher, S ^d   Xu, J M ^a   Shur, M ^e  

^a UNIVERSITY OF TORONTO   (Canada)

^b University of Virginia   (United States)

^c APA Optronics   (United States)

^d Station C   (Canada)

^e RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; CRYOGENICS; ELECTRIC VARIABLES MEASUREMENT; INTEGRATED OPTOELECTRONICS; ION IMPLANTATION; OPTICAL VARIABLES MEASUREMENT; PHOTONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS;

LATERAL CURRENT INJECTION LASERS; SEMICONDUCTOR DEVICE ION IMPLANTATION;

INJECTION LASERS;

EID: 0033123959     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.788433     Document Type: Article

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