Effect of p and n doping on neutral impurity and SiO2 dielectric cap induced quantum well intermixing in GaAs/AlGaAs structures

Semiconductor Science and Technology

Volumn 12, Issue 1, 1997, Pages 121-127

  Ooi, B S ^a   Bryce, A C ^a   Marsh, J H ^a   Roberts, J S ^b  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL IMPURITIES; DIFFUSION; FERMI LEVEL; FLUORINE; ION IMPLANTATION; POINT DEFECTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING BORON; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SILICA;

IMPURITY-FREE VACANCY DISORDERING; IMPURITY-INDUCED DISORDERING; QUANTUM WELL INTERMIXING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030677087     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/12/1/020     Document Type: Article

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