Temperature performance of 1.3-μm InGaAsP-InP lasers with different profile of p-doping

IEEE Photonics Technology Letters

Volumn 9, Issue 12, 1997, Pages 1558-1560

  Belenky, G L ^a,b,c   Donetsky, D V ^c   Reynolds Jr , C L ^b   Kazarinov, R F ^b   Shtengel, G E ^a,b   Luryi, S ^a,c   Lopata, J ^b  

^a IEEE   (United States)

^b NOKIA RESEARCH CENTER   (United States)

^c STONY BROOK UNIVERSITY   (United States)

Author keywords

Doping; Electron emission; Heterojunctions; Non linearities; Optical losses; Semiconductor lasers

Indexed keywords

HETEROJUNCTIONS; LEAKAGE CURRENTS; NONLINEAR OPTICS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; THERMAL EFFECTS;

HETEROBARRIER ELECTRON LEAKAGE CURRENT; OPTICAL LOSSES; THRESHOLD CURRENTS;

QUANTUM WELL LASERS;

EID: 0031380639     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.643259     Document Type: Article

References (12)

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