Accurate electron-cyclotron-resonance etching of semiconductor laser heterostructures using a simple laser reflectometer

IEEE Photonics Technology Letters

Volumn 8, Issue 6, 1996, Pages 818-820

  Parker, M A ^a   Kimmet, J S ^a   Michalak, R J ^a   Wang, H S ^a   Shire, D B ^b   Tang, C L ^b   Drumheller, J P ^c  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b School of Operations Research and Industrial Engineering   (United States)

^c Department of Theoretical and Applied Mechanics and the Cornell Nanofabrication Facility   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON CYCLOTRON RESONANCE; ETCHING; LIGHT REFLECTION; PHOTODETECTORS; REFLECTOMETERS; REFRACTIVE INDEX; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR LASERS; SIGNAL DETECTION; SIGNAL INTERFERENCE; SILICON WAFERS;

DIGITAL DATA ACQUISITION SYSTEM; FABRY-PEROT INTERFERENCE SIGNALS; LASER REFLECTOMETERS; SEMICONDUCTOR LASER HETEROSTRUCTURES; SURFACE REFLECTED;

HETEROJUNCTIONS;

EID: 0030171478     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.502105     Document Type: Article

References (9)

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