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Volumn 8, Issue 1, 1996, Pages 16-18

Demonstration of an ion-implanted, wavelength-shifted quantum-well laser

Author keywords

[No Author keywords available]

Indexed keywords

ION IMPLANTATION; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0029772786     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.475763     Document Type: Article
Times cited : (21)

References (12)
  • 1
    • 0026743692 scopus 로고
    • High-speed and low-drive-voltage monolithic multiple quantum-well modulator/DFB laser light source
    • K. Wakita, I. Kotaka, H. Asai, M. Okamoto, Y. Kondo, and M. Naganuma, "High-speed and low-drive-voltage monolithic multiple quantum-well modulator/DFB laser light source," IEEE Photon. Technol. Lett., vol. 4, no. 1, pp. 16-18, 1992.
    • (1992) IEEE Photon. Technol. Lett. , vol.4 , Issue.1 , pp. 16-18
    • Wakita, K.1    Kotaka, I.2    Asai, H.3    Okamoto, M.4    Kondo, Y.5    Naganuma, M.6
  • 2
    • 0026152485 scopus 로고
    • Integrated external-cavity InGaAs/InP lasers using cap-annealing disordering
    • T. Miyazawa, H. Iwamura, and M. Naganuma, "Integrated external-cavity InGaAs/InP lasers using cap-annealing disordering," IEEE Photon. Technol. Lett., vol. 3, no. 5, pp. 421-423, 1991.
    • (1991) IEEE Photon. Technol. Lett. , vol.3 , Issue.5 , pp. 421-423
    • Miyazawa, T.1    Iwamura, H.2    Naganuma, M.3
  • 3
    • 0026868439 scopus 로고
    • Quantum-well laser with integrated passive waveguide fabricated by neutral impurity disordering
    • S. R. Andrew, J. H. Marsh, M. C. Holland, and A. H. Kean, "Quantum-well laser with integrated passive waveguide fabricated by neutral impurity disordering," IEEE Photon. Technol. Lett., vol. 4, no. 5, pp. 426-428, 1992.
    • (1992) IEEE Photon. Technol. Lett. , vol.4 , Issue.5 , pp. 426-428
    • Andrew, S.R.1    Marsh, J.H.2    Holland, M.C.3    Kean, A.H.4
  • 5
    • 0027910990 scopus 로고
    • Single-step bandgap control in InGaAs/InGaAlAs quantum well modulators via MeV implants
    • Y. Chen, J. E. Zucker, B. Tell, N. J. Sauer, and T. Y. Chang, "Single-step bandgap control in InGaAs/InGaAlAs quantum well modulators via MeV implants," Electron. Letters, vol. 29, no. 1, pp. 87-88, 1993.
    • (1993) Electron. Letters , vol.29 , Issue.1 , pp. 87-88
    • Chen, Y.1    Zucker, J.E.2    Tell, B.3    Sauer, N.J.4    Chang, T.Y.5
  • 6
    • 0028546713 scopus 로고
    • A comparison of carbon and zinc doping in GaAs/AlGaAs lasers badgap-Tuned by impurity-free vacancy disordering
    • S. G. Ayling, A. C. Bryce, I. Gontijo, J. H. Marsh, and J. S. Roberts, "A comparison of carbon and zinc doping in GaAs/AlGaAs lasers badgap-Tuned by impurity-free vacancy disordering," Semiconduct. Sci. Technol., vol. 9, pp. 2149-2151, 1994.
    • (1994) Semiconduct. Sci. Technol. , vol.9 , pp. 2149-2151
    • Ayling, S.G.1    Bryce, A.C.2    Gontijo, I.3    Marsh, J.H.4    Roberts, J.S.5
  • 7
    • 0021371797 scopus 로고
    • Laser beam heating and transformation of a GaAs-AlAs multiple-quantum-well structure
    • D. Kirillov, J. L. Merz, P. D. Dapkus, and J. J. Coleman, "Laser beam heating and transformation of a GaAs-AlAs multiple-quantum-well structure," J. Appl. Phys., vol. 55, no. 4, p. 1105, 1984.
    • (1984) J. Appl. Phys. , vol.55 , Issue.4 , pp. 1105
    • Kirillov, D.1    Merz, J.L.2    Dapkus, P.D.3    Coleman, J.J.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.