Electrical Properties of Rapid Thermal-Enhanced Low Pressure Chemical Vapor Deposited Ta2O5 Thin Films

Electrochemical and Solid-State Letters

Volumn 2, Issue 3, 1999, Pages 135-137

  Lee, Chiao Ju ^a   Huang, Lan Ting ^a   Ezhilvalavan, S ^a   Tseng, Tseung Yuen ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CURRENT DENSITY; FILM PREPARATION; IMPURITIES; LEAKAGE CURRENTS; OXIDES; PERMITTIVITY; RAPID THERMAL ANNEALING; TANTALUM COMPOUNDS; THIN FILMS;

RAPID THERMAL-ENHANCED LOW PRESSURE CHEMICAL VAPOR DEPOSITION; TANTALUM PENTOXIDE;

DIELECTRIC FILMS;

EID: 0033101558     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1390760     Document Type: Article

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