Effect of Bottom Electrode Materials and Annealing Treatments on the Electrical Characteristics of Ba0.47Sr0.53TiO3 Film Capacitors

Journal of the American Ceramic Society

Volumn 82, Issue 2, 1999, Pages 351-358

  Tsai, Ming Shiahn ^a   Sun, Shi Chung ^a,b   Tseng, Tseung Yuen ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT DENSITY; ELECTRIC BREAKDOWN OF SOLIDS; INTERDIFFUSION (SOLIDS); IRIDIUM; LEAKAGE CURRENTS; MAGNETRON SPUTTERING; PERMITTIVITY; REFRACTIVE INDEX; RUTHENIUM; THIN FILM DEVICES; TITANIUM;

BARIUM STRONTIUM TITANATE; TIME-DEPENDENT DIELECTRIC BREAKDOWN (TDDB);

CERAMIC CAPACITORS;

EID: 0033078443     PISSN: 00027820     EISSN: None     Source Type: Journal    
DOI: 10.1111/j.1551-2916.1999.tb20069.x     Document Type: Article

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