Electrical and Reliability Characteristics of Ultrathin Gate Oxide Prepared by Oxidation in D2O

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 38, Issue 2 A, 1999, Pages

  Kim, Hyojune ^a   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

Deuterium oxide; Electron trap; Interface state; MOS gate oxide; Reliability

Indexed keywords

DEUTERIUM; ELECTRON TRAPS; INTERFACES (MATERIALS); MOS CAPACITORS; OXIDES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DEVICE STRUCTURES; SILICA; SILICON WAFERS;

DEUTERIUM OXIDE; MOS GATE OXIDE;

OXIDATION;

EID: 0033077160     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.38.L99     Document Type: Article

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