Dislocation introduction in the initial stages of MBE growth of highly strained In0.30Ga0.70As/GaAs structures

Journal of Crystal Growth

Volumn 169, Issue 2, 1996, Pages 209-216

  Androussi, Y ^a   Lefebvre, A ^a   Benabbas, T ^a   Francois P ^a   Delamarre, C ^b   Laval, J Y ^b   Dubon, A ^b  

^a UNIV LILLE   (France)

^b PSL RESEARCH UNIVERSITY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); FINITE ELEMENT METHOD; MOLECULAR BEAM EPITAXY; NUCLEATION; RELAXATION PROCESSES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; STRESS CONCENTRATION; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY;

PLASTIC RELAXATION;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0030566221     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00384-3     Document Type: Article

References (32)

1. B.F. Lewis, T.C. Lee, F.J. Grunthaner, A. Madhukar, R. Fernandez and J. Maserjian, J. Vac. Sci. Technol. B 2 (1984) 419.
2. F. Houzay, C. Guille, J.M. Moison, P. Hénoc and F. Barthe, J. Crystal Growth 81 (1987) 67.
3. P.R. Berger, K. Chang, P. Bhattacharya and J. Singh, J. Vac. Sci. Technol. B 5 (1987) 1162.
4. J.Y. Yao, T.G. Andersson and G.L. Dunlop, Appl. Phys. Lett. 53 (1988) 1420.
5. N. Grandjean and J. Massies, J. Crystal Growth 134 (1993) 51.
6. R.J. Asaro and W.A. Tiller, Met. Trans. 3 (1972) 1789.
7. D.J. Srolovitz, Acta Met. 37 (1989) 621.
8. B.G. Orr, D. Kessler, C.W. Snyder and L. Sander, Europhys. Lett. 19 (1992) 33.
9. J. Grilhé, Acta Met. Mater. 41 (1993) 909.
10. B.J. Spencer, P.W. Voorhees and S.H. Davis, Phys. Rev. Lett. 67 (1993) 3696.
11. C. Chiu and H. Gao, Int. J. Solids Struct. 30 (1993) 2983.
12. M.A. Grinfeld, J. Non-Linear Sci. 3 (1993) 35.
13. N. Grandjean, J. Massies and F. Raymond, Jpn. J. Appl. Phys. 33 (1994) L1427.
14. D.E. Jesson, S.J. Pennycook, J.M. Baribeau and D.C. Houghton, Phys. Rev. Lett. 71 (1993) 1744.
15. W.A. Jesser and J.W. Matthews, Phil. Mag. 14 (1968) 461.
16. W.A. Jesser and J.W. Matthews, Phil. Mag. 14 (1968) 595.
17. Y.W. Mo, D.E. Savage, B.S. Swartzentruber and M.G. Lagally, Phys. Rev. Lett. 65 (1990) 1020.
18. D.J. Eaglesham and M. Cerullo, Phys. Rev. Lett. 64 (1990) 1943.
19. S. Guha, A. Madhukar and K.C. Rajkumar, Appl. Phys. Lett. 57 (1990) 2110.
20. G. Hollinger, M. Gendry, J.L. Duvault, C. Santinelli, P. Ferret, C. Miossi and M. Pitaval, Appl. Surf. Sci. 56-58 (1992) 665.
21. Y. Androussi, A. Lefebvre, B. Courboulès, N. Grandjean, J. Massies, T. Bouhacina and J.P. Aimé, Appl. Phys. Lett. 65 (1994) 1162.
22. Y. Androussi, A. Lefebvre, C. Delamarre, L.P. Wang, A. Dubon, B. Courboulès, C. Deparis and J. Massies, Appl. Phys. Lett. 66 (1995) 3450.
23. A.G. Cullis, A.J. Pidduck and M.T. Emeny, Phys. Rev. Lett. 75 (1995) 2368.
24. A.G. Cullis, A.J. Pidduck and M.T. Emeny, J. Crystal Growth 158 (1996) 15.
25. B. Courboulès, J. Massies, C. Deparis, N. Grandjean, J. Leymarie, C. Monier, A.M. Vasson and A. Vasson, Appl. Phys. Lett. 64 (1994) 1523.
26. Y. Androussi, P. François, A. Lefebvre, C. Priester, I. Lefebvre, G. Allan, M. Lannoo, J.M. Moison, N. Lebouché and F. Barthe, Evolution of Thin film and Surface Structure and Morphology, Eds. B.G. Demczyck, E. Garfunkel, B.M. Clemens, E.D. Williams and J.J. Cuomo, Mater. Res. Soc. Proc. 355 (1994) 569.
27. H. Gao, J. Mech. Phys. Solids 39 (1991) 443.
28. A.G. Cullis, D.J. Robbins, S.J. Barnett and A.J. Pidduck, J. Vac. Sci. Technol. A 12 (1994) 1924.
29. S.V. Ghaisas and A. Madhukar, J. Vac. Sci. Technol. B 7 (1989) 264.
30. M. Albrecht, S. Christiansen, H.P. Strunk, P.O. Hansson and E. Bauser, Solid State Phenom. 32/33 (1993) 433.
31. S.V. Kamat and J.P. Hirth, J. Appl. Phys. 67 (1990) 6844.
32. H. Gao, J. Mech. Phys. Solids 42 (1994) 741.