Absence of final-state screening shifts in photoemission spectroscopy frontier orbital alignment measurements at organic/semiconductor interfaces

Surface Science

Volumn 420, Issue 1, 1999, Pages

  Schlaf, R ^a   Parkinson, B A ^a   Lee, P A ^b   Nebesny, K W ^b   Armstrong, N R ^b  

^a Department of Environmental and Radiological Health Sciences   (United States)

^b University of Arizona   (United States)

Author keywords

Growth photoelectron emission surface electronic phenomena; Metal semiconductor interfaces; Metal semiconductor nonmagnetic heterostructures; Semiconducting films; Surfaces and or films; Visible and ultraviolet photoelectron spectroscopy

Indexed keywords

CHLORINE COMPOUNDS; ELECTRONIC STRUCTURE; EMISSION SPECTROSCOPY; GRAPHITE; HETEROJUNCTIONS; PHOTOEMISSION; SEMICONDUCTING FILMS; SEMICONDUCTOR METAL BOUNDARIES; THIN FILMS; ULTRAVIOLET SPECTROSCOPY; VAPOR DEPOSITION; X RAY PHOTOELECTRON SPECTROSCOPY;

CHLOROINDIUM PHTHALOCYANINE; PHOTOEMISSION SPECTROSCOPY; WORK FUNCTION MEASUREMENT;

INTERFACES (MATERIALS);

EID: 0032784366     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(98)00850-4     Document Type: Article

References (37)

1. Forrest S.R. Chem. Rev. 97:1997;1793.
2. Lovinger A.J., Rothberg L.J. J. Mater. Res. 11:(6):1996;1581.
3. Schlaf R., Parkinson B.A., Lee P.A., Nebesny A.R., Armstrong A.R. J. Phys. Chem. 1999;. in press.
4. Schlaf R., Parkinson B.A., Lee P.A., Nebesny K.W., Armstrong N.R. Appl. Phys. Lett. 73:(8):1998;1026.
5. Rajagopal A., Kahn A. Adv. Mater. 10:(2):1998;140.
6. Rajagopal A., Wu C.I., Kahn A. J. Appl. Phys. 83:(5):1998;2649.
7. Ishii H., Seki K. IEEE Trans. Electron Devices. 44:(8):1997;1295.
8. Waldrop J.R., Grant R.W. Phys. Rev. Lett. 43:(22):1979;1686.
9. Horn K. Appl. Phys. A51:1990;289.
10. Schlaf R., Lang O., Pettenkofer C., Jaegermann W., Armstrong N.R. J. Vac. Sci. Technol. A 15:(3):1997;1365.
11. Schlaf R., Löher T., Lang O., Klein A., Pettenkofer C., Jaegermann W. Mater. Res. Soc. Symp. Proc. 1997;469.
12. R. Schlaf, O. Lang, C. Pettenkofer, W. Jaegermann, J. Appl. Phys., in press.
13. Kaindl G., Chiang T.-C., Eastman D.E., Himpsel F.J. Phys. Rev. Lett. 45:(22):1980;1808.
14. Wandelt K. J. Vac. Sci. Technol. A 2:(2):1984;802.
15. Wandelt K., Jacob W., Memmel N., Dose V. Phys. Rev. Lett. 57:(13):1986;1643.
16. Rotermund H.H., Jacobi K. Solid State Comm. 44:(4):1982;493.
17. Rotermund H.H., Jacobi K. Surf. Sci. 126:1983;32.
18. Jacobi K. Surf. Sci. 192:1987;499.
19. Jacobi K. Phys. Rev. B 38:(9):1988;6291.
20. Jacobi K. Phys. Rev. B 38:(9):1988;5869.
21. Horn K., Frank K.H., Wilder J.A., Reihl B. Phys. Rev. Lett. 57:(8):1986;1064.
22. Ludwig C., Gompf B., Petersen J., Strohmaier R., Eisenmenger W. Z. Phys. B 93:1994;365.
23. Schmidt A., Chau L.-K., Back A., Armstrong N.R. Leznoffand C., Lever A.P.B. Phthalocyanines. 1996;307-341 VCH Publications, New York.
24. England C.D., Collins G.E., Schuerlein T.J., Armstrong N.R. Langmuir. 10:1994;2748.
25. Seah M.P. Surf. Interf. Anal. 14:1989;488.
26. Kojima I., Kurahashi M. J. Electron Spectrosc. Relat. Phenom. 42:1987;177.
27. Argile C., Rhead G.E. Surf. Sci. Rep. 10:1989;277.
28. Riggs W.M., Parker M.J. Czanderna A.W. Methods of Surface Analysis. 1975;103-158 Elsevier Publishing Company, Amsterdam.
29. Schlaf R., Armstrong N.R., Parkinson B.A., Pettenkofer C., Jaegermann W. Surf. Sci. 385:1997;1.
30. Jaegermann W., Tributsch H. Prog. Surf. Sci. 29:(1/2):1988;1.
31. R. Schlaf, unpublished results.
32. Sze S.M. Semiconductor Devices: Physics and Technology. 1985;John Wiley and Sons, New York.
33. Dumm M., Lunkenheimer P., Loidl A., Assmann B., Homborg H., Fulde P. J. Phys. Chem. 104:(13):1996;5048.
34. Chau L.-K., England C.D., Chen S., Armstrong N.R. J. Phys. Chem. 97:1993;2699.
35. Schottky W. Z. Phys. 14:1923;63.
36. Seki K., Ito E., Ishii H. Synth. Met. 91:1997;137.
37. Hill I.G., Rajagopal A., Kahn A., Hu Y. Appl. Phys. Lett. 73:(5):1998;662.