Experimental determination of quantum dipoles at semiconductor heterojunctions prepared by van der Waals epitaxy: Linear correction term for the electron affinity rule

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 15, Issue 3, 1997, Pages 1365-1370

  Schlaf, R ^a,c   Lang, O ^a   Pettenkofer, C ^a   Jaegermann, W ^a   Armstrong, N R ^b  

^a HAHN MEITNER INSTITUT   (Germany)

^b University of Arizona   (United States)

^c Department of Environmental and Radiological Health Sciences   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND OFFSETS; CORRECTION TERMS; ERROR MARGINS; EXPERIMENTAL DETERMINATION; EXPERIMENTAL ERRORS; HETEROCONTACTS; LAYERED MATERIAL; LINEAR CORRECTIONS; LINEAR RULE; PHOTOEMISSION SPECTROSCOPY; SEMICONDUCTOR HETEROJUNCTIONS; SYSTEMATIC DEVIATION; VAN DER WAALS EPITAXY;

EMISSION SPECTROSCOPY; HETEROJUNCTIONS; MOLYBDENUM COMPOUNDS; VAN DER WAALS FORCES;

ELECTRON AFFINITY;

EID: 0011205019     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580543     Document Type: Article

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