Safe Operating Area for 1200-V Nonlatchup Bipolar-Mode MOSFET's

IEEE Transactions on Electron Devices

Volumn 34, Issue 2, 1987, Pages 351-355

  Nakagawa, Akio ^a   Yamaguchi, Yoshihiro ^a   Watanabe, Kiminori ^a   Ohashi, Hiromichi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC MEASUREMENTS - CURRENT; SOLID STATE DEVICES;

AVALANCHE LIMIT; NONLATCHUP MOSFET; SAFE OPERATING AREA (SOA);

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0023295763     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1987.22929     Document Type: Article

References (12)

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