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Volumn 1992-May, Issue , 1992, Pages 34-38
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A study on IGBT's steady state SOA with newly developed simulation
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Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRIC FIELDS;
IMPACT IONIZATION;
INSULATED GATE BIPOLAR TRANSISTORS (IGBT);
CRITICAL LIMIT;
CURRENT DENSITY DISTRIBUTION;
DEPLETION LAYER;
DEVICE SIMULATORS;
ELECTRIC FIELD DISTRIBUTIONS;
HIGH ELECTRIC FIELDS;
NEGATIVE CHARGE;
STEADY STATE;
SEMICONDUCTOR DEVICES;
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EID: 85067671186
PISSN: 10636854
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/ISPSD.1992.991233 Document Type: Conference Paper |
Times cited : (4)
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References (11)
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