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Volumn 1992-May, Issue , 1992, Pages 34-38

A study on IGBT's steady state SOA with newly developed simulation

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; IMPACT IONIZATION; INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

EID: 85067671186     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.1992.991233     Document Type: Conference Paper
Times cited : (4)

References (11)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.