Study on the IGBT's turn-off failure and inhomogeneous operation

IEEE International Symposium on Power Semiconductor Devices & ICs

Volumn , Issue , 1994, Pages 45-50

  Yamashita, J ^a   Haruguchi, H ^a   Hagino, H ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC LOADS; ELECTRIC RESISTANCE; ELECTRIC WAVEFORMS; FAILURE ANALYSIS; GATES (TRANSISTOR); INTEGRATED CIRCUIT LAYOUT; INTEGRATED CIRCUIT TESTING; SCHEMATIC DIAGRAMS; SHORT CIRCUIT CURRENTS; SWITCHING CIRCUITS;

CURRENT DENSITY; INDUCTIVE LOAD CIRCUIT; INSULATED GATE BIPOLAR TRANSISTORS; SAFETY OPERATING AREA; SNUBBER; TURN OFF FAILURE;

BIPOLAR TRANSISTORS;

EID: 0028727454     PISSN: None     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (2)