Transient enhanced diffusion of dopants in preamorphised Si layers

Materials Research Society Symposium - Proceedings

Volumn 438, Issue , 1996, Pages 3-14

  Claverie, A ^a   Bonafos, C ^a   Omri, M ^a   De Mauduit, B ^a   Assayag, G Ben ^a   Martinez, A ^a   Alquier, D ^a   Mathiot, D ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AMORPHIZATION; ANNEALING; DEFECTS; DIFFUSION; GROWTH (MATERIALS); ION BOMBARDMENT; NUCLEATION; SEMICONDUCTING BORON; SEMICONDUCTOR DOPING; SUPERSATURATION;

BORON DIFFUSSIVITY; CRYSTALLINE SILICON; OSWALD RIPENING THEORY; TRANSIENT ENHANCED DIFFUSION;

SEMICONDUCTING SILICON;

EID: 0030353470     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-438-3     Document Type: Conference Paper

References (44)