Chemical and physical effects in oxygen incorporation during the metalorganic vapor phase epitaxial growth of GaAs

Journal of Crystal Growth

Volumn 163, Issue 1-2, 1996, Pages 171-179

  Kuech, T F ^a   Nayak, S ^a   Huang, J W ^a   Li, J ^a  

^a University of Wisconsin ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ATOMS; CRYSTAL LATTICES; FILM GROWTH; MODELS; MORPHOLOGY; OXYGEN; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE ROUGHNESS; SURFACE STRUCTURE;

CHEMICAL EFFECTS; HILLOCK STRUCTURE; OXYGEN INCORPORATION; PHYSICAL EFFECTS; PRECURSOR;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0030563397     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)01056-4     Document Type: Article

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