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Volumn 163, Issue 1-2, 1996, Pages 171-179
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Chemical and physical effects in oxygen incorporation during the metalorganic vapor phase epitaxial growth of GaAs
a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
ALUMINUM;
ATOMS;
CRYSTAL LATTICES;
FILM GROWTH;
MODELS;
MORPHOLOGY;
OXYGEN;
SEMICONDUCTING GALLIUM ARSENIDE;
SURFACE ROUGHNESS;
SURFACE STRUCTURE;
CHEMICAL EFFECTS;
HILLOCK STRUCTURE;
OXYGEN INCORPORATION;
PHYSICAL EFFECTS;
PRECURSOR;
METALLORGANIC VAPOR PHASE EPITAXY;
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EID: 0030563397
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/0022-0248(95)01056-4 Document Type: Article |
Times cited : (14)
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References (19)
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