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Volumn 163, Issue 1-2, 1996, Pages 171-179

Chemical and physical effects in oxygen incorporation during the metalorganic vapor phase epitaxial growth of GaAs

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ATOMS; CRYSTAL LATTICES; FILM GROWTH; MODELS; MORPHOLOGY; OXYGEN; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE ROUGHNESS; SURFACE STRUCTURE;

EID: 0030563397     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)01056-4     Document Type: Article
Times cited : (14)

References (19)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.