Properties of InP simultaneously doped with zinc and sulfur grown by MOCVD

Materials Research Society Symposium - Proceedings

Volumn 442, Issue , 1997, Pages 441-446

  Alavanja, C M ^a   Pinzone, C J ^a   Sputz, S K ^a   Geva, M ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; CRYSTAL LATTICES; DIFFUSION; ELECTRONIC PROPERTIES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SULFUR; ZINC;

PHOTOLUMINESCENCE SPECTROSCOPY; VAN DER PAUW HALL ANALYSIS;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0030646674     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)