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4
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3643052317
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T. Yasuda, K. Kimura, S. Miwa, L. H. Kuo, C. G. Jin, K. Tanaka and T. Yao: Phys. Rev. Lett. 77 (1996) 326.
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Yasuda, T.1
Kimura, K.2
Miwa, S.3
Kuo, L.H.4
Jin, C.G.5
Tanaka, K.6
Yao, T.7
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5
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0001731540
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M. Wassermeier, J. Behrend, K. H. Ploog, J.-T. Zettler, K. Stahrenberg and W. Richter: Phys. Rev. B 53 (1996) 13542.
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Phys. Rev. B
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Wassermeier, M.1
Behrend, J.2
Ploog, K.H.3
Zettler, J.-T.4
Stahrenberg, K.5
Richter, W.6
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18
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0342385194
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S. J. Morris, J. M. Bass, C. C. Matthai, V. Milman and M. C. Payne: J. Vac. Sci. Technol. B 12 (1994) 2684.
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Morris, S.J.1
Bass, J.M.2
Matthai, C.C.3
Milman, V.4
Payne, M.C.5
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20
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0344256126
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World Scientific, Singapore
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T. Nakayama and M. Murayama: Proc. 23rd Int. Conf. Physics of Semiconductors, Berlin, 1996 (World Scientific, Singapore, 1996) p. 939.
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Proc. 23rd Int. Conf. Physics of Semiconductors, Berlin, 1996
, pp. 939
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Nakayama, T.1
Murayama, M.2
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23
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33645040827
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This problem is present even when the surface local-field effects are included as in refs. 12 and 17, where some surface-layer thickness is assumed
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This problem is present even when the surface local-field effects are included as in refs. 12 and 17, where some surface-layer thickness is assumed.
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-
-
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29
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-
33645043793
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Since there is no translational symmetry along z, the wave number, q, appears in eqs. (2.1) to (2.5)
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Since there is no translational symmetry along z, the wave number, q, appears in eqs. (2.1) to (2.5).
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-
-
-
33
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-
85085674894
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2 (q, ω, ∞) is length
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2 (q, ω, ∞) is length.
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-
-
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34
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0032516988
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3s* bases as in ref. 14, and neglect the many-body effects such as the excitonic one. See refs. 12 and 17 and M. Rohlfing and S. G. Louie: Phys. Rev. Lett. 81 (1998) 2312.
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Phys. Rev. Lett.
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, pp. 2312
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Rohlfing, M.1
Louie, S.G.2
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37
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33645039334
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-
This variable was used to clarify the RD spectral origins in (001) GaAs surfaces in ref. 14
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This variable was used to clarify the RD spectral origins in (001) GaAs surfaces in ref. 14.
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-
-
-
38
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-
85085675031
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b is twice as large as a
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b is twice as large as a.
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-
-
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39
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33645043139
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This decaying factor comes from the propagator of electromagnetic fields in materials. See refs. 34 and 27
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This decaying factor comes from the propagator of electromagnetic fields in materials. See refs. 34 and 27.
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-
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41
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0001122953
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R. J. Meyer, C. B. Duke, A. Paton, A. Kahn, E. So, J. L. Ych and P. Mark: Phys. Rev. B 19 (1979) 5194.
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Phys. Rev. B
, vol.19
, pp. 5194
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-
Meyer, R.J.1
Duke, C.B.2
Paton, A.3
Kahn, A.4
So, E.5
Ych, J.L.6
Mark, P.7
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44
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33645041687
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private communication
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T. Hanada: private communication.
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-
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Hanada, T.1
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45
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24644438273
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T. Yasuda, L. H. Kuo, K. Kimura, S. Miwa, C. G. Jin, K. Tanaka and T. Yao: J. Vac. Sci. Technol. B 14 (1996) 3052.
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(1996)
J. Vac. Sci. Technol. B
, vol.14
, pp. 3052
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-
Yasuda, T.1
Kuo, L.H.2
Kimura, K.3
Miwa, S.4
Jin, C.G.5
Tanaka, K.6
Yao, T.7
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46
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33645044892
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-
note
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The spectra here correspond to the case where the interface anion monolayer has a mixing atom configuration made of As and Se but has no vacancy. As long as there are no defects such as vacancy sites, the ZnSe/GaAs interface has no localized bound states.
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-
-
-
47
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33645040165
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note
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In this sense, the surface between the semiconductor and the vacuum has much larger band discontinuity, thus the localized surface states often appear.
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