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Volumn 38, Issue 6 A, 1999, Pages 3497-3503

Tight-binding-calculation method and physical origin of reflectance difference spectra

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; COMPUTATIONAL METHODS; CRYSTAL ORIENTATION; ELECTRONIC DENSITY OF STATES; INTERFACES (MATERIALS);

EID: 0032689392     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.3497     Document Type: Article
Times cited : (12)

References (48)
  • 23
    • 33645040827 scopus 로고    scopus 로고
    • This problem is present even when the surface local-field effects are included as in refs. 12 and 17, where some surface-layer thickness is assumed
    • This problem is present even when the surface local-field effects are included as in refs. 12 and 17, where some surface-layer thickness is assumed.
  • 29
    • 33645043793 scopus 로고    scopus 로고
    • Since there is no translational symmetry along z, the wave number, q, appears in eqs. (2.1) to (2.5)
    • Since there is no translational symmetry along z, the wave number, q, appears in eqs. (2.1) to (2.5).
  • 33
    • 85085674894 scopus 로고    scopus 로고
    • 2 (q, ω, ∞) is length
    • 2 (q, ω, ∞) is length.
  • 34
    • 0032516988 scopus 로고    scopus 로고
    • 3s* bases as in ref. 14, and neglect the many-body effects such as the excitonic one. See refs. 12 and 17 and M. Rohlfing and S. G. Louie: Phys. Rev. Lett. 81 (1998) 2312.
    • (1998) Phys. Rev. Lett. , vol.81 , pp. 2312
    • Rohlfing, M.1    Louie, S.G.2
  • 37
    • 33645039334 scopus 로고    scopus 로고
    • This variable was used to clarify the RD spectral origins in (001) GaAs surfaces in ref. 14
    • This variable was used to clarify the RD spectral origins in (001) GaAs surfaces in ref. 14.
  • 38
    • 85085675031 scopus 로고    scopus 로고
    • b is twice as large as a
    • b is twice as large as a.
  • 39
    • 33645043139 scopus 로고    scopus 로고
    • This decaying factor comes from the propagator of electromagnetic fields in materials. See refs. 34 and 27
    • This decaying factor comes from the propagator of electromagnetic fields in materials. See refs. 34 and 27.
  • 44
    • 33645041687 scopus 로고    scopus 로고
    • private communication
    • T. Hanada: private communication.
    • Hanada, T.1
  • 46
    • 33645044892 scopus 로고    scopus 로고
    • note
    • The spectra here correspond to the case where the interface anion monolayer has a mixing atom configuration made of As and Se but has no vacancy. As long as there are no defects such as vacancy sites, the ZnSe/GaAs interface has no localized bound states.
  • 47
    • 33645040165 scopus 로고    scopus 로고
    • note
    • In this sense, the surface between the semiconductor and the vacuum has much larger band discontinuity, thus the localized surface states often appear.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.