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Volumn 58, Issue 4, 1998, Pages 1922-1927

Ab initio calculation of the reflectance anisotropy of GaAs(110)

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Indexed keywords


EID: 0001695591     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.58.1922     Document Type: Article
Times cited : (33)

References (37)
  • 25
    • 5844306937 scopus 로고
    • The relatively high value of the gap at Γ is a common feature of the calculations, which employ the present pseudopotential at the theoretical lattice constant. We have repeated the calculations using a different numerical pseudopotential generated within the Hamann scheme [D. R. Hamann, Phys. Rev. B 40, 2980 (1989)], yielding a smaller direct bulk gap of 0.8 eV. Nevertheless, the RA spectra calculated using the two pseudopotentials are very similar to each other. This substantiates our conjecture that the value of the minimum bulk gap is not important for obtaining the surface optical properties. As a consequence, the inclusion of nonlinear core corrections, whose main effect is to reduce the bulk minimum gap, is not expected to change qualitatively the present results.
    • (1989) Phys. Rev. B , vol.40 , pp. 2980
    • Hamann, D.1
  • 32
    • 0000861414 scopus 로고
    • Actually a larger shift should be applied to the empty surface bands to agree with the findings of B. Reihl, T. Riesterer, M. Tschudy, and P. Perfetti, Phys. Rev. B 38, 13456 (1988). In this work, however, the gaps between surface states are larger than those of Ref. 30.
    • (1988) Phys. Rev. B , vol.38 , pp. 13456
    • Reihl, B.1    Riesterer, T.2    Tschudy, M.3    Perfetti, P.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.