Scanning capacitance microscopy investigations of buried heterostructure laser structures

Applied Surface Science

Volumn 144-145, Issue , 1999, Pages 137-140

  Bowallius, O ^a   Anand, S ^a   Hammar, M ^a   Nilsson, S ^a   Landgren, G ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

Buried hetero structure lasers; LPE; MOVPE; p n Junctions; Regrowth; SCM

Indexed keywords

CAPACITANCE; ELECTRIC CURRENTS; HETEROJUNCTIONS; LIQUID PHASE EPITAXY; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS;

BURIED HETEROSTRUCTURE LASER STRUCTURES; CURRENT CONFINEMENT; SCANNING CAPACITANCE MICROSCOPY; SELECTIVE REGROWTH;

SCANNING ELECTRON MICROSCOPY;

EID: 0032687254     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00784-3     Document Type: Article

References (8)

1. Y. Huang, C.C. Williams, M.A. Wendman, J. Vac. Sci. Technol. B 14 (1996) 1168.
2. J.J. Kopanski, J.F. Marchiando, J.R. Lowney, J. Vacc, Sci. Technol. B 14 (1996) 242.
3. H. Edwards, R. McGlothlin, R.S. Martin, U. Elisa, M. Gribelyuk, R. Mahaffy, C.K. Shih, R.S. List, V.A. Ukraintsev, Appl. Phys. Lett. 72 (1998) 698.
4. H. Tomiye, T. Yao, H. Kawami, T. Hayashi, Appl. Phys. Lett. 69 (1996) 4050.
5. M. Öbergm, S. Nilsson, K. Struebel, J. Wallin, L. Bäckbom, T. Klinga, IEEE Photon. Technol. Lett. 5 (1993) 735.
6. M. Hammar, E. Rodriguez Messmer, M. Luzuy, S. Anand, S. Lourdudoss, G. Landgren, Appl. Phys. Lett. 72 (1998) 815.
7. N. Nordell, J. Borglind, J. Crystal Growth 114 (1991) 92.
8. M. Kondo, C. Anayama, N. Okada, H. Sekiguchi, K. Domen, T. Tanahashi, J. Appl. Phys. 76 (1994) 914.