VARIATION OF LATERAL DOPING - A NEW CONCEPT TO AVOID HIGH VOLTAGE BREAKDOWN OF PLANAR JUNCTIONS.

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1985, Pages 154-157

  Stengl, R ^a   Goesele, U ^a  

^a SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; SEMICONDUCTOR MATERIALS;

LATERAL DOPING; PLANAR JUNCTIONS; SEMICONDUCTOR DEVICE ION IMPLANTATION; SEMICONDUCTOR JUNCTIONS;

SEMICONDUCTOR DEVICES;

EID: 0022307936     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)