메뉴 건너뛰기




Volumn 42, Issue 12, 1995, Pages 2226-2230

Arbitrary Lateral Diffusion Profiles

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION IN SOLIDS; ION IMPLANTATION; MASKS; PHOTOLITHOGRAPHY; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON ON INSULATOR TECHNOLOGY;

EID: 0029534560     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.477783     Document Type: Article
Times cited : (24)

References (10)
  • 2
    • 0027149649 scopus 로고
    • Dependence of breakdown voltage on drift length and buried oxide thickness in SOI RESURFtransistors LDMOS
    • S. Merchant et al., “Dependence of breakdown voltage on drift length and buried oxide thickness in SOI RESURF LDMOS transistors,” in Proc. 5th Int. Symp. Power Semiconductor Devices and IC's, 1993, pp. 124-128.
    • (1993) Proc. 5th Int. Symp. Power Semiconductor Devices and IC's , pp. 124-128
    • Merchant, S.1
  • 3
    • 0023436311 scopus 로고
    • Multiple-zone single-mask junction termination extension—A high-yield near-ideal breakdown voltage technology
    • W. Tantraporn and V. A. K. Temple, “Multiple-zone single-mask junction termination extension—A high-yield near-ideal breakdown voltage technology,” IEEE Trans. Electron Devices, vol. ED-34, pp. 2200–2210, 1987.
    • (1987) IEEE Trans. Electron Devices , vol.ED-34 , pp. 2200-2210
    • Tantraporn, W.1    Temple, V.A.K.2
  • 4
    • 0022307936 scopus 로고
    • Variation of lateral doping—A new concept to avoid high voltage breakdown of planar junctions
    • R. Stengl and U. Gösele “Variation of lateral doping—A new concept to avoid high voltage breakdown of planar junctions,” IEDM Tech. Dig., pp. 154–157, 1985.
    • (1985) IEDM Tech. Dig. , pp. 154-157
    • Stengl, R.1    Gösele, U.2
  • 5
    • 0026926744 scopus 로고
    • Theory of optimum design of reverse-biased p-n junctions using resistive field plates and variation lateral doping
    • X. B. Chen, B. Zhang, and Z. J. Li, “Theory of optimum design of reverse-biased p-n junctions using resistive field plates and variation lateral doping,” Solid-State Electron., vol. 35, pp. 1365–1370, 1992.
    • (1992) Solid-State Electron. , vol.35 , pp. 1365-1370
    • Chen, X.B.1    Zhang, B.2    Li, Z.J.3
  • 6
    • 0026222514 scopus 로고
    • Surface breakdown and stability of high-voltage planar junctions
    • R. Stengl and E. Falck, “Surface breakdown and stability of high-voltage planar junctions,” IEEE Trans. Electron Devices, vol. 38, pp. 2181–2188, 1991.
    • (1991) IEEE Trans. Electron Devices , vol.38 , pp. 2181-2188
    • Stengl, R.1    Falck, E.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.