High purity nano-crystalline carbon nitride films prepared at ambient temperature by ion beam sputtering

Surface and Coatings Technology

Volumn 115, Issue 2-3, 1999, Pages 116-122

  Lu, T R ^a   Kuo, C T ^a   Yang, J R ^b   Chen, L C ^b   Chen, K H ^c   Chen, T M ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^c ACADEMIA SINICA   (Taiwan)

Author keywords

Bio molecular targets; Carbon nitride films; Ion beam sputtering; Nano crystalline films

Indexed keywords

CARBON INORGANIC COMPOUNDS; CHEMICAL BONDS; COPPER; ION BEAMS; NANOSTRUCTURED MATERIALS; NICKEL; NITRIDES; SILICON WAFERS; SILVER; SPUTTERING; STAINLESS STEEL; TRANSMISSION ELECTRON MICROSCOPY;

CARBON NITRIDE; ION BEAM SPUTTERING;

PROTECTIVE COATINGS;

EID: 0032681744     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0257-8972(99)00154-1     Document Type: Article

References (29)

1. Liu A.Y., Cohen M.L. Science. 245:1989;841.
2. Teter D.M., Hemely R.J. Science. 271:1996;53.
3. Sung C.M., Sung M. Mater. Chem. Phys. 43:1996;1.
4. Badding J.V., Nesting D.C. Chem. Mater. 8:1996;535.
5. Wixom M.R. J. Am. Ceram. Soc. 73:1990;1973.
6. Maya L., Cole D.R., Hagaman E.W. J. Am. Ceram. Soc. 74:1991;1686.
7. Nesting D.C., Badding J.V. Chem. Mater. 8:1996;1535.
8. Niu C., Lu Y.Z., Lieber C.M. Science. 261:1993;334.
9. Li D., Lopez S., Chung Y.M., Wong M.S., Sproul W.D. J. Vac. Sci. Technol. A. 13:(3):1995;1063.
10. Yu K.M., Cohen M.L., Haller E.E., Hansen W.L., Liu A.Y., Wu I.C. Phys. Rev. B. 49:1994;5034.
11. Marton D., Todorov S.S., AI-Bayati A.H., Kulik J., Zuhr R.A., Rabalais J.W. J. Vac. Sci. Technol. A. 13:1995;2110.
12. Hoffman A., Gouzman I., Brener R. Appl. Phys. Lett. 64:1994;845.
13. Yen T.Y., Chou C.P. Appl. Phys. Lett. 67:1995;6.
14. Chen L.C., Bhusari D.M., Yang C.Y., Chen K.H., Chuang T.J., Lin M.C., Chen C.K., Haung Y.F. Thin Solid Films. 303:1997;66.
15. Lu T.R., Kuo C.T., Chen T.M. Thin Solid Films. 308:1997;126.
16. Diani M., Mansour A., Kubler L., Bischoff J.L., Bolmont D. Diamond Relat. Mater. 5:1996;514.
17. Zang Z.J., Fan S., Lieber C.M. Appl. Phys. Lett. 66:1995;3582.
18. Todd M., Kouvetakis J., Groy T.L., Chandrasekhar D., Smith D.J., Deal P.W. Chem. Mater. 7:1995;1422.
19. Kouvetakis J., Bandari A., Todd M., Wikens B., Cave N. Chem. Mater. 6:1994;811.
20. Kobayashi S., Nozaki S., Morisaki H., Masaki S. Jpn. J. Appl. Phys. 36:1997;5187.
21. Lacerda M.M., Franceschini D.F., Freire F.L. Jr., Mariotto G. Diamond Relat. Mater. 6:1997;635.
22. Lu T.R., Chen L.C., Chen K.H., Bhusari D.M., Chen T.M., Kuo C.T. Thin Solid Films. 332:1999;74.
23. Zhao X.A., Ong C.W., Tsang Y.C., Wong Y.W., Chan P.W., Choy C.L. Appl. Phys. Lett. 66:1995;2652.
24. Bousetta A., Lu M., Bensaoula A., Schultz A. Appl. Phys. Lett. 65:1994;696.
25. Sjostrom H., Hultman L., Sundgren J.-E., Hainsworth S.V., Page T.F., Theunissen G.S.A.M. J. Vac. Sci. Technol. A. 14:(1):1996;56.
26. Okada T., Yamada S., Takeuchi Y., Wada T. J. Appl. Phys. 78:(12):1995;7416.
27. Sjostrom H., Lanford W., Hjorvarson B., Xing K., Sundgren J.E. J. Mater. Res. 12:(4):1996;981.
28. Marton D., Boyd K.J., Al-Bayati A.H., Todorov S.S., Rabalais J.W. Phys. Rev. Lett. 73:1994;118.
29. E.E. Haller, M.L. Cohen, W.L. Hansen, US Patent 5 110 679, 1992.