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Volumn 156, Issue 1, 1999, Pages 84-89

High energy ion implantation studies on GaAs and InP

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CRYSTAL DEFECTS; CURRENT VOLTAGE CHARACTERISTICS; HEAVY IONS; ION BOMBARDMENT; LITHIUM; RADIATION DAMAGE; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; SILICON;

EID: 0032681332     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(99)00276-1     Document Type: Article
Times cited : (2)

References (26)
  • 25
    • 0345120925 scopus 로고
    • Properties of Indium Phosphide, INSPEC
    • J.P. Fillard, Properties of Indium Phosphide, INSPEC, EMS Data Review Series (6) (1990) 249.
    • (1990) EMS Data Review Series , Issue.6 , pp. 249
    • Fillard, J.P.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.