Hydrogen profiling and the stoichiometry of an a-SiNx: H film

Vacuum

Volumn 46, Issue 3, 1995, Pages 265-267

  Avasthi, DK ^a   Acharya, MG ^b   Tarey, RD ^b   Malhotra, LK ^b   Mehta, GK ^a  

^a INTER UNIVERSITY ACCELERATOR CENTRE   (India)

^b INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; DATA REDUCTION; HYDROGEN; IONS; NICKEL; STOICHIOMETRY; THICKNESS MEASUREMENT; THIN FILMS;

DEPTH PROFILING; ELASTIC RECOIL DETECTION ANALYSIS; FILM THICKNESS;

SILICON NITRIDE;

EID: 0029271136     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0042-207X(94)00056-5     Document Type: Article

References (19)

1. Growth and characterization of silicon-nitride films by plasma-enhanced chemical vapor deposition
2. The use of 6Li and 35Cl ion beams in surface analysis
3. Hydrogen depth profiling of SiNx films by the detection of recoiled protons
4. Chemical and physical changes induced in polyvinylidene fluoride by irradiation with high energy ions
5. Software for ERDA simulation
6. Ion beam analysis for depth profiling